Decoupled transversely-excited film bulk acoustic resonators

ABSTRACT

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate supported by the substrate. A portion of the piezoelectric plate suspended across a cavity in the substrate forms a diaphragm. A decoupling dielectric layer is on a front surface of the diaphragm. An interdigital transducer (IDT) has interleaved fingers on the decoupling dielectric layer over the diaphragm. The IDT and piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites shear acoustic waves in the diaphragm.

RELATED APPLICATION INFORMATION

This patent is a continuation of application Ser. No. 17/408,120, filedAug. 20, 2021, entitled DECOUPLED TRANSVERSELY-EXCITED FILM BULKACOUSTIC RESONATORS, which claims priority to provisional patentapplication No. 63/137,736, filed Jan. 15, 2021, entitled XBAR WITHINSULATING LAYER BETWEEN ELECTRODE AND PIEZOELECTRIC MEMBRANE TO REDUCEACOUSTIC COUPLING. Both of these applications are incorporated herein byreference.

A portion of the disclosure of this patent document contains materialwhich is subject to copyright protection. This patent document may showand/or describe matter which is or may become trade dress of the owner.The copyright and trade dress owner has no objection to the facsimilereproduction by anyone of the patent disclosure as it appears in thePatent and Trademark Office patent files or records, but otherwisereserves all copyright and trade dress rights whatsoever.

BACKGROUND Field

This disclosure relates to radio frequency filters using acoustic waveresonators, and specifically to filters for use in communicationsequipment.

Description of the Related Art

A radio frequency (RF) filter is a two-port device configured to passsome frequencies and to stop other frequencies, where “pass” meanstransmit with relatively low signal loss and “stop” means block orsubstantially attenuate. The range of frequencies passed by a filter isreferred to as the “pass-band” of the filter. The range of frequenciesstopped by such a filter is referred to as the “stop-band” of thefilter. A typical RF filter has at least one pass-band and at least onestop-band. Specific requirements on a pass-band or stop-band depend onthe application. For example, a “pass-band” may be defined as afrequency range where the insertion loss of a filter is better than adefined value such as 1 dB, 2 dB, or 3 dB. A “stop-band” may be definedas a frequency range where the rejection of a filter is greater than adefined value such as 20 dB, 30 dB, 40 dB, or greater depending onapplication.

RF filters are used in communications systems where information istransmitted over wireless links. For example, RF filters may be found inthe RF front-ends of cellular base stations, mobile telephone andcomputing devices, satellite transceivers and ground stations, IoT(Internet of Things) devices, laptop computers and tablets, fixed pointradio links, and other communications systems. RF filters are also usedin radar and electronic and information warfare systems.

RF filters typically require many design trade-offs to achieve, for eachspecific application, the best compromise between performance parameterssuch as insertion loss, rejection, isolation, power handling, linearity,size and cost. Specific design and manufacturing methods andenhancements can benefit simultaneously one or several of theserequirements.

Performance enhancements to the RF filters in a wireless system can havebroad impact to system performance. Improvements in RF filters can beleveraged to provide system performance improvements such as larger cellsize, longer battery life, higher data rates, greater network capacity,lower cost, enhanced security, higher reliability, etc. Theseimprovements can be realized at many levels of the wireless system bothseparately and in combination, for example at the RF module, RFtransceiver, mobile or fixed sub-system, or network levels.

High performance RF filters for present communication systems commonlyincorporate acoustic wave resonators including surface acoustic wave(SAW) resonators, bulk acoustic wave (BAW) resonators, film bulkacoustic wave resonators (FBAR), and other types of acoustic resonators.However, these existing technologies are not well-suited for use at thehigher frequencies and bandwidths proposed for future communicationsnetworks.

The desire for wider communication channel bandwidths will inevitablylead to the use of higher frequency communications bands. Radio accesstechnology for mobile telephone networks has been standardized by the3GPP (3^(rd) Generation Partnership Project). Radio access technologyfor 5^(th) generation (5G) mobile networks is defined in the 5G NR (newradio) standard. The 5G NR standard defines several new communicationsbands. Two of these new communications bands are n77, which uses thefrequency range from 3300 MHz to 4200 MHz, and n79, which uses thefrequency range from 4400 MHz to 5000 MHz. Both band n77 and band n79use time-division duplexing (TDD), such that a communications deviceoperating in band n77 and/or band n79 use the same frequencies for bothuplink and downlink transmissions. Bandpass filters for bands n77 andn79 must be capable of handling the transmit power of the communicationsdevice. WiFi bands at 5 GHz and 6 GHz also require high frequency andwide bandwidth. The 5G NR standard also defines millimeter wavecommunication bands with frequencies between 24.25 GHz and 40 GHz.

The Transversely-Excited Film Bulk Acoustic Resonator (XBAR) is anacoustic resonator structure for use in microwave filters. The XBAR isdescribed in U.S. Pat. No. 10,491,291, titled TRANSVERSELY EXCITED FILMBULK ACOUSTIC RESONATOR. An XBAR resonator comprises an interdigitaltransducer (IDT) formed on a thin floating layer, or diaphragm, of asingle-crystal piezoelectric material. The IDT includes a first set ofparallel fingers, extending from a first busbar and a second set ofparallel fingers extending from a second busbar. The first and secondsets of parallel fingers are interleaved. A microwave signal applied tothe IDT excites a shear primary acoustic wave in the piezoelectricdiaphragm. XBAR resonators provide very high electromechanical couplingand high frequency capability. XBAR resonators may be used in a varietyof RF filters including band-reject filters, band-pass filters,duplexers, and multiplexers. XBARs are well suited for use in filtersfor communications bands with frequencies above 3 GHz.

DESCRIPTION OF THE DRAWINGS

FIG. 1 includes a schematic plan view, two schematic cross-sectionalviews, and a detail view of a transversely-excited film bulk acousticresonator (XBAR).

FIG. 2 is a schematic block diagram of a band-pass filter using acousticresonators.

FIG. 3 is a graph of the magnitude of admittance for XBARs using YX-cutlithium niobate and Z-cut lithium niobate diaphragms.

FIG. 4 is a schematic cross-sectional view of an XBAR with a decouplingdielectric layer between the IDT fingers and the piezoelectricdiaphragm.

FIG. 5 is a graph of the magnitude of admittance for XBARs withdecoupling dielectric layers with different thicknesses.

FIG. 6 is a graph of electromechanical coupling as a function ofdecoupling dielectric layer thickness.

FIG. 7 is a graph of the input-output transfer function of a band N79filter using decoupled XBARs.

FIG. 8 is a flow chart of a method for fabricating a decoupled XBAR or afilter using decoupled XBARs.

Throughout this description, elements appearing in figures are assignedthree-digit or four-digit reference designators, where the two leastsignificant digits are specific to the element and the one or two mostsignificant digit is the figure number where the element is firstintroduced. An element that is not described in conjunction with afigure may be presumed to have the same characteristics and function asa previously-described element having the same reference designator.

DETAILED DESCRIPTION Description of Apparatus

FIG. 1 shows a simplified schematic top view and orthogonalcross-sectional views of an XBAR 100. XBAR-type resonators such as theXBAR 100 may be used in a variety of RF filters including band-rejectfilters, band-pass filters, duplexers, and multiplexers.

The XBAR 100 is made up of a thin film conductor pattern formed on asurface of a piezoelectric plate 110 having parallel front and backsurfaces 112, 114, respectively. The piezoelectric plate is a thinsingle-crystal layer of a piezoelectric material such as lithiumniobate, lithium tantalate, lanthanum gallium silicate, gallium nitride,or aluminum nitride. The piezoelectric plate is cut such that theorientation of the X, Y, and Z crystalline axes with respect to thefront and back surfaces is known and consistent. The piezoelectric platemay be Z-cut, which is to say the Z axis is normal to the front and backsurfaces 112, 114. The piezoelectric plate may be rotated Z-cut orrotated YX-cut. XBARs may be fabricated on piezoelectric plates withother crystallographic orientations.

The back surface 114 of the piezoelectric plate 110 is attached to asurface of a substrate 120 except for a portion of the piezoelectricplate 110 that forms a diaphragm 115 spanning a cavity 140 formed in thesubstrate. The portion of the piezoelectric plate that spans the cavityis referred to herein as the “diaphragm” 115 due to its physicalresemblance to the diaphragm of a microphone. As shown in FIG. 1 , thediaphragm 115 is contiguous with the rest of the piezoelectric plate 110around all of a perimeter 145 of the cavity 140. In this context,“contiguous” means “continuously connected without any interveningitem”. In other configurations, the diaphragm 115 may be contiguous withthe piezoelectric plate around at least 50% of the perimeter 145 of thecavity 140.

The substrate 120 provides mechanical support to the piezoelectric plate110. The substrate 120 may be, for example, silicon, sapphire, quartz,or some other material or combination of materials. The back surface 114of the piezoelectric plate 110 may be attached to the substrate 120using a wafer bonding process. Alternatively, the piezoelectric plate110 may be grown on the substrate 120 or attached to the substrate insome other manner. The piezoelectric plate 110 may be attached directlyto the substrate or may be attached to the substrate 120 via one or moreintermediate material layers (not shown in FIG. 1 ).

“Cavity” has its conventional meaning of “an empty space within a solidbody.” The cavity 140 may be a hole completely through the substrate 120(as shown in Section A-A and Section B-B) or a recess in the substrate120 under the diaphragm 115. The cavity 140 may be formed, for example,by selective etching of the substrate 120 before or after thepiezoelectric plate 110 and the substrate 120 are attached.

The conductor pattern of the XBAR 100 includes an interdigitaltransducer (IDT) 130. The IDT 130 includes a first plurality of parallelfingers, such as finger 136, extending from a first busbar 132 and asecond plurality of fingers extending from a second busbar 134. The term“busbar” means a conductor from which the fingers of an IDT extend. Thefirst and second pluralities of parallel fingers are interleaved. Theinterleaved fingers overlap for a distance AP, commonly referred to asthe “aperture” of the IDT. The center-to-center distance L between theoutermost fingers of the IDT 130 is the “length” of the IDT.

The first and second busbars 132, 134 serve as the terminals of the XBAR100. A radio frequency or microwave signal applied between the twobusbars 132, 134 of the IDT 130 excites a primary acoustic mode withinthe piezoelectric plate 110. The primary acoustic mode is a bulk shearmode where acoustic energy propagates along a direction substantiallyorthogonal to the surface of the piezoelectric plate 110, which is alsonormal, or transverse, to the direction of the electric field created bythe IDT fingers. Thus, the XBAR is considered a transversely-excitedfilm bulk wave resonator.

The IDT 130 is positioned on the piezoelectric plate 110 such that atleast the fingers of the IDT 130 are disposed on the diaphragm 115 thatspans, or is suspended over, the cavity 140. As shown in FIG. 1 , thecavity 140 has a rectangular shape with an extent greater than theaperture AP and length L of the IDT 130. A cavity of an XBAR may have adifferent shape, such as a regular or irregular polygon. The cavity ofan XBAR may more or fewer than four sides, which may be straight orcurved.

For ease of presentation in FIG. 1 , the geometric pitch and width ofthe IDT fingers are greatly exaggerated with respect to the length(dimension L) and aperture (dimension AP) of the XBAR. A typical XBARhas more than ten parallel fingers in the IDT 130. An XBAR may havehundreds, possibly thousands, of parallel fingers in the IDT 130.Similarly, the thicknesses of the IDT fingers and the piezoelectricplate in the cross-sectional views are greatly exaggerated.

Referring now to the detailed schematic cross-sectional view (Detail C),a front-side dielectric layer 150 may optionally be formed on the frontside of the piezoelectric plate 110. The “front side” of the XBAR is, bydefinition, the surface facing away from the substrate. The front-sidedielectric layer 150 may be formed only between the IDT fingers (e.g.IDT finger 138 b) or may be deposited as a blanket layer such that thedielectric layer is formed both between and over the IDT fingers (e.g.IDT finger 138 a). The front-side dielectric layer 150 may be anon-piezoelectric dielectric material, such as silicon dioxide, alumina,or silicon nitride. A thickness of the front side dielectric layer 150is typically less than about one-third of the thickness tp of thepiezoelectric plate 110. The front-side dielectric layer 150 may beformed of multiple layers of two or more materials. In someapplications, a back-side dielectric layer (not shown) may be formed onthe back side of the piezoelectric plate 110.

The IDT fingers 138 a, 138 b may be one or more layers of aluminum, analuminum alloy, copper, a copper alloy, beryllium, gold, tungsten,molybdenum, chromium, titanium or some other conductive material. TheIDT fingers are considered to be “substantially aluminum” if they areformed from aluminum or an alloy comprising at least 50% aluminum. TheIDT fingers are considered to be “substantially copper” if they areformed from copper or an alloy comprising at least 50% copper. Thin(relative to the total thickness of the conductors) layers of metalssuch as chromium or titanium may be formed under and/or over and/or aslayers within the fingers to improve adhesion between the fingers andthe piezoelectric plate 110 and/or to passivate or encapsulate thefingers and/or to improve power handling. The busbars (132, 134 in FIG.1 ) of the IDT may be made of the same or different materials as thefingers.

Dimension p is the center-to-center spacing or “pitch” of the IDTfingers, which may be referred to as the pitch of the IDT and/or thepitch of the XBAR. Dimension m is the width or “mark” of the IDTfingers. The geometry of the IDT of an XBAR differs substantially fromthe IDTs used in surface acoustic wave (SAW) resonators. In a SAWresonator, the pitch of the IDT is one-half of the acoustic wavelengthat the resonance frequency. Additionally, the mark-to-pitch ratio of aSAW resonator IDT is typically close to 0.5 (i.e. the mark or fingerwidth is about one-fourth of the acoustic wavelength at resonance). Inan XBAR, the pitch p of the IDT may be 2 to 20 times the width m of thefingers. The pitch p is typically 3.3 to 5 times the width m of thefingers. In addition, the pitch p of the IDT may be 2 to 20 times thethickness of the piezoelectric plate 210. The pitch p of the IDT istypically 5 to 12.5 times the thickness of the piezoelectric plate 210.The width m of the IDT fingers in an XBAR is not constrained to be nearone-fourth of the acoustic wavelength at resonance. For example, thewidth of XBAR IDT fingers may be 500 nm or greater, such that the IDTcan be readily fabricated using optical lithography. The thickness ofthe IDT fingers may be from 100 nm to about equal to the width m. Thethickness of the busbars (132, 134) of the IDT may be the same as, orgreater than, the thickness of the IDT fingers.

FIG. 2 is a schematic circuit diagram and layout for a high frequencyband-pass filter 200 using XBARs. The filter 200 has a conventionalladder filter architecture including three series resonators 210A, 210B,210C and two shunt resonators 220A, 220B. The three series resonators210A, 210B, and 210C are connected in series between a first port and asecond port (hence the term “series resonator”). In FIG. 2 , the firstand second ports are labeled “In” and “Out”, respectively. However, thefilter 200 is bidirectional and either port may serve as the input oroutput of the filter. The two shunt resonators 220A, 220B are connectedfrom nodes between the series resonators to ground. A filter may containadditional reactive components, such as capacitors and/or inductors, notshown in FIG. 2 . All the shunt resonators and series resonators areXBARs. The inclusion of three series and two shunt resonators isexemplary. A filter may have more or fewer than five total resonators,more or fewer than three series resonators, and more or fewer than twoshunt resonators. Typically, all of the series resonators are connectedin series between an input and an output of the filter. All of the shuntresonators are typically connected between ground and one of the input,the output, or a node between two series resonators.

In the exemplary filter 200, the three series resonators 210A, B, C andthe two shunt resonators 220A, B of the filter 200 are formed on asingle plate 230 of piezoelectric material bonded to a silicon substrate(not visible). In some filters, the series resonators and shuntresonators may be formed on different plates of piezoelectric material.Each resonator includes a respective IDT (not shown), with at least thefingers of the IDT disposed over a cavity in the substrate. In this andsimilar contexts, the term “respective” means “relating things each toeach”, which is to say with a one-to-one correspondence. In FIG. 2 , thecavities are illustrated schematically as the dashed rectangles (such asthe rectangle 235). In this example, each IDT is disposed over arespective cavity. In other filters, the IDTs of two or more resonatorsmay be disposed over a single cavity.

Each of the resonators 210A, 210B, 210C, 220A, 220B in the filter 200has resonance where the admittance of the resonator is very high and ananti-resonance where the admittance of the resonator is very low. Theresonance and anti-resonance occur at a resonance frequency and ananti-resonance frequency, respectively, which may be the same ordifferent for the various resonators in the filter 200. Inover-simplified terms, each resonator can be considered a short-circuitat its resonance frequency and an open circuit at its anti-resonancefrequency. The input-output transfer function will be near zero at theresonance frequencies of the shunt resonators and at the anti-resonancefrequencies of the series resonators. In a typical filter, the resonancefrequencies of the shunt resonators are positioned below the lower edgeof the filter's passband and the anti-resonance frequencies of theseries resonators are positioned above the upper edge of the passband.In some filters, a front-side dielectric layer (also called a “frequencysetting layer”), represented by the dot-dash rectangle 270, may beformed on the shunt resonators to set the resonance frequencies of theshunt resonators lower relative to the resonance frequencies of theseries resonators. In other filters, the diaphragms of series resonatorsmay be thinner than the diaphragms of shunt resonators. In some filters,the series resonators and the shunt resonators may be fabricated onseparate chips having different piezoelectric plate thicknesses.

Lithium niobate (LN) is a preferred piezoelectric material for use inXBARs. LN has very high electromechanical coupling and is available asthin plates attached to non-piezoelectric substrates. While a widevariety of crystal orientations can be used in an XBAR, two orientationsthat have been used are Z-cut (Euler angles 0°, 0°, 90°) and rotatedY-cut (Euler angles 0°, β, 0° where 0°<β≤70°). Rotated Y-cut LN with30°≤β≤38° has higher electromechanical coupling than Z-cut LN. Further,while both Z cut and rotated Y-cut LN XBARs are susceptible to leakageof acoustic energy in the transverse direction (the direction parallelto the IDT fingers), comparatively simple structures can be used tominimize such losses in a rotated Y-cut LN XBAR. Minimizing acousticlosses in a Z-cut LN XBAR requires a more complex structure thatnecessitates additional fabrication steps. XBARs using rotated Y-cut LNmay have fewer and smaller spurious modes than Z-cut LN XBARs.

FIG. 3 is a graph 300 of the magnitude of admittance for two XBARs. Thedata shown in FIG. 3 and all subsequent examples results from simulationof the XBARs using a finite element method. Solid curve 310 is theadmittance of an XBAR using a rotated Y-cut LN piezoelectric plate withβ=30°. The dashed curve 320 is the admittance of an XBAR using a Z-cutLN piezoelectric plate. In both cases, the piezoelectric plate thicknessis 400 nm, the IDT electrodes are aluminum, the IDT pitch is 3 micronsand the IDT finger mark is 0.5 microns. The resonance frequency FR ofboth XBARs is about 4760 MHz and the anti-resonance frequencies FA ofthe rotated Y-cut and Z-cut XBARs are about 5550 MHz and 5350 MHz,respectively. The difference between the resonance and anti-resonancefrequencies of the rotated Y-cut and Z-cut XBARs are about 590 MHz and790 MHz, respectively. The electromechanical coupling may be quantifiedby a parameter k² _(eff), where k² _(eff)=(FA²−FR²)/FA²·k² _(eff) of therotated Y-cut and Z-cut XBARs of FIG. 3 are 26.4% and 20.8%,respectively.

The large difference between the resonance and anti-resonancefrequencies of rotated Y-cut LN XBARs enables the design of filters withvery wide bandwidth. However, the difference between the resonance andanti-resonance frequencies can be too high for some filter applications.For example, 5G NR band N79 spans a frequency range from 4400 MHz to5000 MHz. A band N79 bandpass filter cannot be implemented withconventional rotated Y-cut LN XBARs. As previously described, theresonance frequencies of shunt resonators in a ladder filter circuit aretypically just below the lower edge of the filter passband and theanti-resonance frequencies of shunt resonators are within the passband.Conversely, the anti-resonance frequencies of series resonators aretypically just above the upper edge of the filter passband and theresonance frequencies of series resonators are within the passband. Toachieve these two requirements, the difference between the resonance andanti-resonance frequencies of the resonators needs to be less than orequal to the filter bandwidth. The difference between the resonance andanti-resonance frequencies of a rotated Y-cut LN XBAR is 790 MHz, whichis greater than the 600 MHz bandwidth of band N79.

FIG. 4 is a detailed cross-sectional schematic view of a “decoupled”XBAR resonator (DXBAR) 400. The decoupled XBAR 400 includes apiezoelectric plate 410 having a thickness tp and IDT fingers 438 havinga thickness tm, pitch p, and width m. The materials of the piezoelectricplate 410 and the IDT fingers 438 may be as previously described.

The difference between the decoupled XBAR 400 and the XBAR 100 shown inDetail C of FIG. 1 , is the presence of a dielectric layer 450 betweenthe IDT fingers 438 and the diaphragm 410. The effect of the dielectriclayer 450 is to “decouple” the XBAR 400, which is to say reduce theelectromechanical coupling of the XBAR 400. A dielectric layer such asthe dielectric layer 450 will be referred to herein as a “decouplingdielectric layer”. The degree of decoupling depends, in part, on athickness tdd of the decoupling dielectric layer 450.

The decoupling dielectric layer 450 may be made of, for example, silicondioxide, silicon nitride, aluminum oxide, or some other suitabledielectric material. In some applications, a preferred material for thedecoupling dielectric layer 450 may be silicon dioxide, which providesan important secondary benefit of lowering the temperature coefficientof frequency (TCF) of the XBAR 400 compared to the XBAR 100 of FIG. 1 .

Although not shown in FIG. 4 , one or more additional dielectric layers,such as the dielectric layer 150 in FIG. 1 , may be formed over the IDTfingers 438 and the decoupling dielectric layer 450. The additionaldielectric layers may include a frequency setting layer, typicallyformed over the IDTs of shunt resonators in a ladder filter circuit tolower their resonant frequency relative to the resonance frequencies ofseries resonators. The additional dielectric layers may also be orinclude a passivation and tuning layer that seals the surface of thedevice and provides sacrificial material that can be selectively removedto tune the resonance frequency.

FIG. 5 is a graph 500 of the magnitude of admittance as a function offrequency for three decoupled XBAR devices. The solid curve 510 is aplot of the magnitude of admittance of a decoupled XBAR with tdd (thethickness of the decoupling dielectric layer)=70 nm. The dashed curve520 is a plot of the magnitude of admittance of a decoupled XBAR withtdd=80 nm. The dot-dash curve 530 is a plot of the magnitude ofadmittance of a decoupled XBAR with tdd=90 nm. All three XBARs userotated Y-cut piezoelectric plates with Euler angles 0°, 30°, 0°.

Increasing the thickness of the decoupling dielectric layer increasesthe overall thickness of the XBAR diaphragm which results in acorresponding reduction in resonance frequency. Increasing the thicknessof the decoupling dielectric layer lowers the electromechanical couplingwhich reduces the difference between the resonance and anti-resonancefrequencies. The values of k² _(eff) for the three XBARs are 21%, 20%,and 19%. The k² _(eff) of the XBAR with tdd=80 nm (dashed curve 520) isapproximately the same as an XBAR using a Z-cut piezoelectric plate.

The effect of a decoupling dielectric layer will scale with thethickness of the piezoelectric plate. FIG. 6 is a graph 600 of k² _(eff)as a function of the ratio of tdd (thickness of the decouplingdielectric layer) to tp (thickness of the piezoelectric plate) for XBARsusing rotated Y-cut lithium niobate with Euler angles 0°, 37.5°, 0°. Theopen circle 610 represents the LN XBAR of FIG. 3 and the filled circles620 represent the three XBARs of FIG. 5 . The dashed line 630 is areasonable linear approximation to the data points over this range oftdd/tp.

The ratio tdd/tp will typically be greater than or equal to 0.05 toobtain a useful reduction in k² _(eff). The ratio tdd/tp will generallynot be greater than 0.5.

FIG. 7 is a graph 700 of the performance of a preliminary band N79bandpass filter design using decoupled XBARs. Specifically, the curve710 is a plot of the magnitude of S2,1 (the input-output transferfunction) of the filter versus frequency. The simulated filterincorporates seven decoupled XBARs in a ladder filter circuit. Thepiezoelectric plate is rotated Y-cut lithium niobate. The thickness ofthe decoupling dielectric layer is about 22% of the thickness of thepiezoelectric plate. A frequency setting dielectric layer is formed overthe shunt resonators and a passivation dielectric layer is formed overall of the resonators.

The frequency of an XBAR or DXBAR is primarily determined by thethickness of its diaphragm, including the piezoelectric plate and anydielectric layers. The mark and pitch of the IDT of an XBAR are selectedto minimize the effects of spurious modes and, in particular, to locatespurious modes at frequencies removed from the passband of a filter. Thelength and aperture of an XBAR or DXBAR is determined by a combinationof the capacitance required to match desired filter input and outputimpedances and the anticipate power dissipation in the device.

For a given IDT pitch and mark, the capacitance per unit IDT area of aDXBAR will be less than the capacitance per unit area of an XBAR. Thereduction in capacitance is due to the presence of the decouplingdielectric layer, which has a significantly lower dielectric constantthan the piezoelectric plate. However, the mark/pitch design space (forlow spurious modes) for DXBARs tends to favor smaller pitch values.Smaller pitch results in larger capacitance per unit area, which offsetsthe reduced capacitance due to the presence of the decoupling dielectriclayer. Thus, filters using DXBARs need not be larger, and may in somecases be smaller, than filters using XBARs.

A secondary, but important benefit of using a silicon dioxide decouplingdielectric layer is an improvement in the temperature coefficient offrequency (TCF). A DXBAR with a decoupling dielectric layer thicknessabout 22% of the thickness of the piezoelectric plate has a TCF of 65 atthe resonance frequency and 62 at the anti-resonance frequency. Acomparable XBAR using Z-cut lithium niobate has a TCF of 105 at theresonance frequency and 83 at the anti-resonance frequency.

The use of a decoupling dielectric layer to reduce the electromechanicalcoupling of an XBAR provides the filter designer with an additionaldegree of freedom. The filter designer may tailor the electromechanicalcoupling to the requirements of a particular filter without requiring aunique cut angle for the piezoelectric plate.

Description of Methods

FIG. 8 is a simplified flow chart summarizing a process 800 forfabricating a filter device incorporating DXBARs. Specifically, theprocess 800 is for fabricating a filter device including multipleDXBARs, some of which may include a frequency setting dielectric layer.The process 800 starts at 805 with a device substrate and a thin plateof piezoelectric material disposed on a sacrificial substrate. Theprocess 800 ends at 895 with a completed filter device. The flow chartof FIG. 8 includes only major process steps. Various conventionalprocess steps (e.g. surface preparation, cleaning, inspection, baking,annealing, monitoring, testing, etc.) may be performed before, between,after, and during the steps shown in FIG. 8 .

While FIG. 8 generally describes a process for fabricating a singlefilter device, multiple filter devices may be fabricated simultaneouslyon a common wafer (consisting of a piezoelectric plate bonded to asubstrate). In this case, each step of the process 800 may be performedconcurrently on all of the filter devices on the wafer.

The flow chart of FIG. 8 captures three variations of the process 800for making an XBAR which differ in when and how cavities are formed inthe device substrate. The cavities may be formed at steps 810A, 810B, or810C. Only one of these steps is performed in each of the threevariations of the process 800.

The piezoelectric plate may typically be rotated Y-cut lithium niobate.The piezoelectric plate may be some other material and/or some othercut. The device substrate may preferably be silicon. The devicesubstrate may be some other material that allows formation of deepcavities by etching or other processing.

In one variation of the process 800, one or more cavities are formed inthe device substrate at 810A, before the piezoelectric plate is bondedto the substrate at 815. A separate cavity may be formed for eachresonator in a filter device. The one or more cavities may be formedusing conventional photolithographic and etching techniques. Typically,the cavities formed at 810A will not penetrate through the devicesubstrate.

At 815, the piezoelectric plate is bonded to the device substrate. Thepiezoelectric plate and the device substrate may be bonded by a waferbonding process. Typically, the mating surfaces of the device substrateand the piezoelectric plate are highly polished. One or more layers ofintermediate materials, such as an oxide or metal, may be formed ordeposited on the mating surface of one or both of the piezoelectricplate and the device substrate. One or both mating surfaces may beactivated using, for example, a plasma process. The mating surfaces maythen be pressed together with considerable force to establish molecularbonds between the piezoelectric plate and the device substrate orintermediate material layers.

At 820, the sacrificial substrate may be removed. For example, thepiezoelectric plate and the sacrificial substrate may be a wafer ofpiezoelectric material that has been ion implanted to create defects inthe crystal structure along a plane that defines a boundary between whatwill become the piezoelectric plate and the sacrificial substrate. At820, the wafer may be split along the defect plane, for example bythermal shock, detaching the sacrificial substrate and leaving thepiezoelectric plate bonded to the device substrate. The exposed surfaceof the piezoelectric plate may be polished or processed in some mannerafter the sacrificial substrate is detached.

Thin plates of single-crystal piezoelectric materials laminated to anon-piezoelectric substrate are commercially available. At the time ofthis application, both lithium niobate and lithium tantalate plates areavailable bonded to various substrates including silicon, quartz, andfused silica. Thin plates of other piezoelectric materials may beavailable now or in the future. The thickness of the piezoelectric platemay be between 300 nm and 1000 nm. When the substrate is silicon, alayer of SiO₂ may be disposed between the piezoelectric plate and thesubstrate. When a commercially available piezoelectric plate/devicesubstrate laminate is used, steps 810A, 815, and 820 of the process 800are not performed.

At 825, a decoupling dielectric layer is formed by depositing adielectric material on the front surface of the piezoelectric plate. Thedecoupling dielectric layer may typically be silicon dioxide but may beanother dielectric material such as silicon nitride or aluminum oxide.The decoupling dielectric layer may be a composite of two or moredielectric materials or layers of two or more dielectric materials. Thedecoupling dielectric layer may be patterned such that the decouplingdielectric layer is present on some portions of the piezoelectric plateand not present on other portions of the piezoelectric plate. Thedecoupling dielectric layer may be formed as two or moreseparately-patterned layers such that different thicknesses ofdecoupling dielectric layer are present on different portions of thepiezoelectric plate.

A first conductor pattern, including IDTs and reflector elements of eachXBAR, is formed at 845 by depositing and patterning one or moreconductor layers on the front side of the piezoelectric plate. All orportions of the first conductor pattern may be over the decouplingdielectric layer formed at 825. The conductor layer may be, for example,aluminum, an aluminum alloy, copper, a copper alloy, or some otherconductive metal. Optionally, one or more layers of other materials maybe disposed below (i.e. between the conductor layer and thepiezoelectric plate) and/or on top of the conductor layer. For example,a thin film of titanium, chrome, or other metal may be used to improvethe adhesion between the conductor layer and the piezoelectric plate. Asecond conductor pattern of gold, aluminum, copper or other higherconductivity metal may be formed over portions of the first conductorpattern (for example the IDT bus bars and interconnections between theIDTs).

Each conductor pattern may be formed at 845 by depositing the conductorlayer and, optionally, one or more other metal layers in sequence overthe surface of the piezoelectric plate. The excess metal may then beremoved by etching through patterned photoresist. The conductor layercan be etched, for example, by plasma etching, reactive ion etching, wetchemical etching, or other etching techniques.

Alternatively, each conductor pattern may be formed at 845 using alift-off process. Photoresist may be deposited over the piezoelectricplate. and patterned to define the conductor pattern. The conductorlayer and, optionally, one or more other layers may be deposited insequence over the surface of the piezoelectric plate. The photoresistmay then be removed, which removes the excess material, leaving theconductor pattern.

At 850, one or more frequency setting dielectric layer(s) may be formedby depositing one or more layers of dielectric material on the frontside of the piezoelectric plate. For example, a dielectric layer may beformed over the shunt resonators to lower the frequencies of the shuntresonators relative to the frequencies of the series resonators. The oneor more dielectric layers may be deposited using a conventionaldeposition technique such as physical vapor deposition, atomic layerdeposition, chemical vapor deposition, or some other method. One or morelithography processes (using photomasks) may be used to limit thedeposition of the dielectric layers to selected areas of thepiezoelectric plate. For example, a mask may be used to limit adielectric layer to cover only the shunt resonators.

At 855, a passivation/tuning dielectric layer is deposited over thepiezoelectric plate and conductor patterns. The passivation/tuningdielectric layer may cover the entire surface of the filter except forpads for electrical connections to circuitry external to the filter. Insome instantiations of the process 800, the passivation/tuningdielectric layer may be formed after the cavities in the devicesubstrate are etched at either 810B or 810C.

In a second variation of the process 800, one or more cavities areformed in the back side of the device substrate at 810B. A separatecavity may be formed for each resonator in a filter device. The one ormore cavities may be formed using an anisotropic ororientation-dependent dry or wet etch to open holes through the backside of the device substrate to the piezoelectric plate. In this case,the resulting resonator devices will have a cross-section as shown inFIG. 1 .

In a third variation of the process 800, one or more cavities in theform of recesses in the device substrate may be formed at 810C byetching the substrate using an etchant introduced through openings inthe piezoelectric plate. A separate cavity may be formed for eachresonator in a filter device. The one or more cavities formed at 810Cwill not penetrate through the device substrate.

Ideally, after the cavities are formed at 810B or 810C, most or all ofthe filter devices on a wafer will meet a set of performancerequirements. However, normal process tolerances will result invariations in parameters such as the thicknesses of dielectric layerformed at 850 and 855, variations in the thickness and line widths ofconductors and IDT fingers formed at 845, and variations in thethickness of the piezoelectric plate. These variations contribute todeviations of the filter device performance from the set of performancerequirements.

To improve the yield of filter devices meeting the performancerequirements, frequency tuning may be performed by selectively adjustingthe thickness of the passivation/tuning layer deposited over theresonators at 855. The frequency of a filter device passband can belowered by adding material to the passivation/tuning layer, and thefrequency of the filter device passband can be increased by removingmaterial to the passivation/tuning layer. Typically, the process 800 isbiased to produce filter devices with passbands that are initially lowerthan a required frequency range but can be tuned to the desiredfrequency range by removing material from the surface of thepassivation/tuning layer.

At 860, a probe card or other means may be used to make electricalconnections with the filter to allow radio frequency (RF) tests andmeasurements of filter characteristics such as input-output transferfunction. Typically, RF measurements are made on all, or a largeportion, of the filter devices fabricated simultaneously on a commonpiezoelectric plate and substrate.

At 865, global frequency tuning may be performed by removing materialfrom the surface of the passivation/tuning layer using a selectivematerial removal tool such as, for example, a scanning ion mill aspreviously described. “Global” tuning is performed with a spatialresolution equal to or larger than an individual filter device. Theobjective of global tuning is to move the passband of each filter devicetowards a desired frequency range. The test results from 860 may beprocessed to generate a global contour map indicating the amount ofmaterial to be removed as a function of two-dimensional position on thewafer. The material is then removed in accordance with the contour mapusing the selective material removal tool.

At 870, local frequency tuning may be performed in addition to, orinstead of, the global frequency tuning performed at 865. “Local”frequency tuning is performed with a spatial resolution smaller than anindividual filter device. The test results from 860 may be processed togenerate a map indicating the amount of material to be removed at eachfilter device. Local frequency tuning may require the use of a mask torestrict the size of the areas from which material is removed. Forexample, a first mask may be used to restrict tuning to only shuntresonators, and a second mask may be subsequently used to restricttuning to only series resonators (or vice versa). This would allowindependent tuning of the lower band edge (by tuning shunt resonators)and upper band edge (by tuning series resonators) of the filter devices.

After frequency tuning at 865 and/or 870, the filter device is completedat 875. Actions that may occur at 875 include forming bonding pads orsolder bumps or other means for making connection between the device andexternal circuitry (if such pads were not formed at 845); excisingindividual filter devices from a wafer containing multiple filterdevices; other packaging steps; and additional testing. After eachfilter device is completed, the process ends at 895.

Closing Comments

Throughout this description, the embodiments and examples shown shouldbe considered as exemplars, rather than limitations on the apparatus andprocedures disclosed or claimed. Although many of the examples presentedherein involve specific combinations of method acts or system elements,it should be understood that those acts and those elements may becombined in other ways to accomplish the same objectives. With regard toflowcharts, additional and fewer steps may be taken, and the steps asshown may be combined or further refined to achieve the methodsdescribed herein. Acts, elements and features discussed only inconnection with one embodiment are not intended to be excluded from asimilar role in other embodiments.

As used herein, “plurality” means two or more. As used herein, a “set”of items may include one or more of such items. As used herein, whetherin the written description or the claims, the terms “comprising”,“including”, “carrying”, “having”, “containing”, “involving”, and thelike are to be understood to be open-ended, i.e., to mean including butnot limited to. Only the transitional phrases “consisting of” and“consisting essentially of”, respectively, are closed or semi-closedtransitional phrases with respect to claims. Use of ordinal terms suchas “first”, “second”, “third”, etc., in the claims to modify a claimelement does not by itself connote any priority, precedence, or order ofone claim element over another or the temporal order in which acts of amethod are performed, but are used merely as labels to distinguish oneclaim element having a certain name from another element having a samename (but for use of the ordinal term) to distinguish the claimelements. As used herein, “and/or” means that the listed items arealternatives, but the alternatives also include any combination of thelisted items.

It is claimed:
 1. An acoustic resonator device comprising: a substrate;at least one piezoelectric plate supported by the substrate; a diaphragmcomprising a portion of the at least one piezoelectric plate suspendedacross a cavity; a decoupling dielectric layer on a surface of thediaphragm; and an interdigital transducer (IDT) with interleaved fingerson the decoupling layer opposite the diaphragm, wherein the IDT and theat least one piezoelectric plate are configured such that a radiofrequency signal applied to the IDT excites shear acoustic waves in thediaphragm.
 2. The acoustic resonator device of claim 1, wherein the atleast one piezoelectric plate is rotated Y-cut lithium niobate.
 3. Theacoustic resonator device of claim 2, wherein Euler angles of the atleast one piezoelectric plate are 0°, β, 0°, and 30°≤β≤38°.
 4. Theacoustic resonator device of claim 1, wherein the decoupling dielectriclayer comprises one of silicon dioxide, silicon nitride, and aluminumoxide.
 5. The acoustic resonator device of claim 1, wherein a thicknessof the at least one piezoelectric plate is greater than or equal to 200nm and less than or equal to 1000 nm.
 6. The acoustic resonator deviceof claim 5, wherein a thickness of the decoupling dielectric layer isgreater than or equal to 0.05 times the thickness of the at least onepiezoelectric plate and less than or equal to 0.5 times the thickness ofthe at least one piezoelectric plate.
 7. The acoustic resonator deviceof claim 1, further comprising: a dielectric layer on the decouplingdielectric layer between the interleaved fingers of the IDT, wherein aresonant frequency of the acoustic resonator device is determined, inpart, by a thickness of the dielectric layer.
 8. The acoustic resonatordevice of claim 7, wherein the dielectric layer comprises at least oneof silicon dioxide, silicon nitride, and aluminum oxide.
 9. The acousticresonator device of claim 1, wherein the IDT comprises one of aluminum,an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten,molybdenum, chromium, and titanium.
 10. The acoustic resonator device ofclaim 1, wherein the substrate comprises a combination of materials andthe cavity extends into the substrate.
 11. An acoustic resonatoracoustic resonator device comprising: a substrate; at least onepiezoelectric plate supported by the substrate; a diaphragm comprising aportion of the at least one piezoelectric plate suspended across acavity; a decoupling dielectric layer on a surface of the diaphragm; andan interdigital transducer (IDT) comprising a plurality of interleavedfingers extending alternately from first and second busbars, overlappingportions of the plurality of interleaved fingers on the decoupling layeropposite the diaphragm, wherein the IDT and the at least onepiezoelectric plate are configured such that a radio frequency signalapplied between the first and second busbars excites shear acousticwaves in the diaphragm.
 12. The acoustic resonator device of claim 11,wherein the substrate comprises a combination of materials and thecavity extends into the substrate.
 13. The acoustic resonator device ofclaim 11, wherein the decoupling dielectric layer comprises one ofsilicon dioxide, silicon nitride, and aluminum oxide.
 14. The acousticresonator device of claim 11, wherein a thickness of the at least onepiezoelectric plate is greater than or equal to 200 nm and less than orequal to 1000 nm.
 15. The acoustic resonator device of claim 14, whereina thickness of the decoupling dielectric layer is greater than or equalto 0.05 times the thickness of the at least one piezoelectric plate andless than or equal to 0.5 times the thickness of the at least onepiezoelectric plate.
 16. The acoustic resonator device of claim 11,further comprising: a dielectric layer on the decoupling dielectriclayer between fingers of the plurality of interleaved fingers of theIDT, wherein a resonant frequency of the acoustic resonator device isdetermined, in part, by a thickness of the dielectric layer.
 17. Theacoustic resonator device of claim 16, wherein the dielectric layercomprises at least one of silicon dioxide, silicon nitride, and aluminumoxide.
 18. The acoustic resonator device of claim 11, wherein the IDTcomprises one of aluminum, an aluminum alloy, copper, a copper alloy,beryllium, gold, tungsten, molybdenum, chromium, and titanium.
 19. Theacoustic resonator device of claim 11, wherein the at least onepiezoelectric plate is rotated Y-cut lithium niobate.
 20. The acousticresonator device of claim 19, wherein Euler angles of the at least onepiezoelectric plate are 0°, β, 0°, and 30°≤β≤38°.